Research Skill

Ø Growth using MOCVD: III-nitride and its alloy materials such as GaN, AlGaN, AlInN, InN, InGaN based structures on different substrates such as Sapphire, Si, and GaN for electronic and optoelectronic applications.

Ø Device processing:

(i) Electronic devices: GaN-based HEMTs, MOSFETs, and Diode

(ii) Optoelectronic devices: InGaN-based Solar cells

Ø Processing Tools:

· Mask Aligner

· Inductively Coupled Plasma Reactive Ion Etching (SAMCO Model RIE-200i)

· Atomic Layer Deposition (Savannah S100-4PVP, Cambridge NanoTech)

· Sputtering (TOKUDA Model CFS-4ES)

· Optical Lithography

· E-beam Evaporator

· Rapid Thermal Annealing (RTA) (Allwin21 Corp. AccuThermo AW610)

· Hall Measurement (77 – 1020 K) (Toyo Technica ResiTest 8310)

· FE-SEM and EDX (Zeiss, ULTRA plus)

· X-ray (ATX, Rigaku)

· Spectral response measurement (CEP-1600s)

Ø Device characterization system: DC characteristics (Agilent 4155C, 41501B), Curve tracer (ONY Tektronix 370A PROGRAMMABLE), high temperature DC characteristics (RT-300°C), capacitance-voltage characteristics (Agilent 4284 A, 20 Hz-1MHz)

Ø System development: On-probe Pulsed I-V system (Gate bias: ±10 V, drain bias: up to 400 V, measuring time 200 ns, accuracy ± 0.03 mA and ± 0.1 V)

Ø Device modeling and simulation tools: QuantumATK - Atomistic Simulation Software, Quantum ESPRESSO, Silvaco TCAD ATLAS, COMSOL Multiphysics, LTSpice, Python, and MATLAB

ACADEMIC PROJECTS

Dr. Md. Tanvir Hasan

Dr. Md. Tanvir Hasan

Dept. of Electrical and Electronic Engineering

Jashore University of Science and Technology

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